Atomic Layer Deposition on Polymer Thin Films: On the Role of Precursor Infiltration and Reactivity

Inorganic barriers grown by atomic layer deposition (ALD) can overcome the stability issues originating from permeation of foreign species (water and oxygen) into polymer thin films. Alternatively, infiltration ALD bulk be used to modify its characteristic properties. In this study, feasibility growing an inorganic barrier with on polystyrene, poly(methyl methacrylate), poly(ethylene terephthalate glycol) films is evaluated. The nucleation growth layer, including film, are monitored in situ using spectroscopic ellipsometry, Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy for Al2O3-ALD trimethylaluminum as Al precursor H2O reactant. results show that temperature presence location functional groups chain exert strongest influence behavior such allow us manipulate (i.e. prevent or expedite) film.